Switching Behaviors of Graphene-Boron Nitride Nanotube Heterojunctions

Switching Behaviors of Graphene-Boron Nitride Nanotube Heterojunctions

High electron mobility of graphene has enabled their application in high-frequency analogue devices but their gapless nature has hindered their use in digital switches. In contrast, the structural analogous, h-BN sheets and BN nanotubes (BNNTs) are wide band gap insulators. Here we show that the growth of electrically insulating BNNTs on graphene can enable the use of graphene as effective digi...

Boron Nitride Nanotube Peapods

We demonstrate that boron nitride (BN) nanotubes can be filled "peapod" fashion with C60 molecules. Filling small-diameter BN nanotubes results in a linear chain of C60 molecules in the interior, while filling large diameter BN nanotubes leads to nanorods of crystalline C60 in the interior. Electron beam damage can be used to fuse the encapsulated C60 molecules into carbon nanotubes, leading to...

Boron Nitride Nanotube: Synthesis and Applications

Scientists have predicted that carbon’s immediate neighbors on the periodic chart, boron and nitrogen, may also form perfect nanotubes, since the advent of carbon nanotubes (CNTs) in 1991. First proposed then synthesized by researchers at UC Berkeley in the mid 1990’s, the boron nitride nanotube (BNNT) has proven very difficult to make until now. Herein we provide an update on a catalyst-free m...

Tunneling spectroscopy of graphene-boron-nitride heterostructures

F. Amet,1 J. R. Williams,2 A. G. F. Garcia,2 M. Yankowitz,2 K. Watanabe,3 T. Taniguchi,3 and D. Goldhaber-Gordon2 1Department of Applied Physics, Stanford University, Stanford, California 94305, USA 2Department of Physics, Stanford University, Stanford, California 94305, USA 3Advanced Materials Laboratory, National Institute for Materials Science, 1-1 Namiki, Tsukuba 305-0044, Japan (Received 1...

Carbon nanotube and boron nitride nanotube hostedC60â•fiV nanopeapods